Advanced GaAs Integration For mmWave Front-Ends
(Room Ballroom G)
18 Oct 18
1:20 PM
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1:50 PM
Compound semiconductor technology, and specifically GaAs, has captured a large and growing market share in wireless and optical systems by providing the optimum combination of RF performance and value. To remain the solution of choice in next generation systems and applications, GaAs technology has to compliment its inherent performance advantage with increased integration and functionality. Historically, GaAs has lagged Si technology in offering multiple device types on the same wafer (e,g, power, low noise, E/D logic, schottky diode, PIN diode, etc) to enable highly integrated multifunctional MMICs. This gap is rapidly closing and this presentation will describe advanced GaAs platforms that incorporate new levels of functionality within high performance mmWave pHEMT technologies. These platforms provide users with a new set of tools to address the ever evolving and complex performance requirements of present and future communication systems.