Rethink Server Power Architecture with GaN Technology
(Room Exhibit Hall A)
17 Oct 18
1:30 PM
-
2:30 PM
With the power architecture transition from a 12 V to 48 V rack in modern data centers there is an increased interest in improving 48 V down power conversion efficiency and power density. The interest spans both isolated and non-isolated implementations of the intermediate bus converters (IBC) and 48V to POL configurations. eGaN FETs have the ability to reduce solution size by enabling higher switching frequency operation and improve efficiency over state-of-the-art silicon MOSFET solutions. In this presentation we will present how eGaN FET characteristics, such as low output capacitance (COSS), low RDSON in comparison to comparable MOSFETs, and zero reverse recovery charge (QRR), yield lower switching losses that offer 48V application performance improvement over silicon solutions for just about all topologies. What will be covered are eGaN FET basics, a selection of design details and comparisons that includes both figure of merit (FOM) and measured results compared with comparable MOSFETs. The presentation will conclude with a demonstration of the Texas Instruments PMP4497 48V to 1V up to 40 Amps load hard switched transformer based high ratio step down converter that features the LMG5200 GaN Based half bridge module on the primary and EPC’s EPC2023 GaN FETs as synchronous rectifiers.