Maximizing SiH3 Radical Concentration During HWCVD Si:H Film Production by Means of Wire Temperature and Deposition Pressure Tuning
(Room Room 104-C)
01 May 19
10:00 AM
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10:20 AM
Tracks:
Fundamental Aspects of Coatings (Joint Session with ICMCTF)
A simulation of gas phase chemistry near the wire surface in a hot-wire chemical vapor deposition (HWCVD) chamber, which utilizes an array of tungsten wires and silane (SiH4) as a process gas, with hydrogen (H2), phosphine (PH3), and diborane (B2H6) as additional gasses, was made. SiH3 radical partial pressures were simulated as a function of wire temperature and deposition pressure for given gas inlet compositions in order to attempt to maximize these radicals, as they lead to higher quality and more ordered Si:H films. An attempt to confirm the simulation results through a series of depositions using a 10 x 0.5 mm tungsten wire array providing a deposition area of 500 x 600 mm2 was made. Wire temperatures, H2 gas flows, and process pressures were varied in an attempt to produce the highest quality Si:H film as measured through Raman crystallinity measurements, XRD grain size measurements, and EPMA impurity analysis. The results from the experimental sets are then compared to the simulation theory.