With the advance of modern technologies, there are demands for more sophisticated and specific thin film material properties for both single films and film stacks in the areas of display, semiconductor, and glass coating. The difficult part in film stack development is that each film layer has to not only demonstrate desired film properties but also show good interfacial behavior with neighboring layers to contribute to the performance of the whole film stack or device. As a result, modern thin film material systems have included more elements from the periodic table and also have more complex compositions. On the other hand, the demand for short time to market has been increased. In this paper, we present a case study of new oxide thin film transistor (TFT) material development, which is a key material for OLED and flexible display application. By using a combinatorial approach applied to sputtering technology, a desired material was found and optimized to the device performance in 7 months. The material resulted in superior device performance, whose negative bias temperature illumination stress (NBTIS) and positive bias temperature stress (PBTS) were both less than 0.5V.