Control of Reactive Bipolar HIPIMS Processes in Dual Magnetron Configuration
(Room Wabash 3)
10 May 16
2:40 PM
-
3:00 PM
Tracks:
High Power Impulse Magnetron Sputtering (HIPIMS), High Power Impulse Magnetron Sputtering (HIPIMS), High Power Impulse Magnetron Sputtering (HIPIMS)
This paper presents data on the control of reactive bipolar HIPIMS sputtering processes in dual magnetron configuration. Similar to mid-frequency (MF) sputtering, particularly when using reactive processes forming insulating films, bipolar operation in dual magnetron configuration offers the chance to avoid target surface charging and thus, minimize arcing. Also, this configuration does not suffer the problem of the disappearing anode, allowing continuous operation in production systems. The experiments were performed in sputtering systems using rotatable as well as planar magnetrons, loaded with pure Al targets, and a HIPIMS power supply. Oxygen was used as a reactive gas. Data on the process stabilization using feedback control, deposition growth rates, coating microstructure, defects density and breakdown voltage will be presented.