Abstract:
Berkeley Lab is an International hub for advanced research in EUV Lithography. Capabilities include 0.3 and 0.5 NA EUV microfield exposure tools, variable NA Mask microscopy, EUV reflectometry, scatterometry, and optical properties measurements. In addition, we have programs in fundamental resist research. Our resist research focuses on understanding the fundamental radiation and resist interactions to break the sensitivity/line edge roughness/resolution tradeoff in next generation EUV resists. In our recent work, we look at specific sensitizing agents that both increase absorption of photons and photon induced electron emmission. I will discuss Berkeley Lab’s unique capabilities and newest findings elucidating how to think about molecular design in EUV resists. Opportunities for Industry engagement with the Lab will be highlighted throughout.