Abstract:
Silicon carbide (SiC) devices are paving the way for a new generation of power electronics, enabling major system benefits including higher efficiencies, greater power density and simpler operation. SiC MOSFETs are a core part of these advancements, with new devices showing much lower on-resistances, faster switching times with lower losses and reliability on par with established silicon devices. GE is working closely with the New York Power Electronics Manufacturing Consortium (PEMC) to bring up novel fabrication capabilities for this cutting edge technology, including foundry access with state-of-the-art SiC materials. This summary will touch on the SiC market drivers, novel technical advancements and PEMC's quickly evolving offerings to the SiC community.